Evaluation of the performances of a novel Punch Through Trench IGBT using a Si(1-x)Ge(x) N+ buffer layer by using finite elements simulations

In this paper, a new Punch Through Trench IGBT using a Si_(1-x)Ge_x N⁺ buffer layer is investigated by using two dimensional finite elements numerical simulations. The performances of this device are mainly obtained from the reduction of the turn-off switching time for a slight elevation of the on-state voltage. A study of the main static characteristics has been performed, particularly the relevance of the trade-off between the turn-off time and the on-state voltage, and its temperature dependency. At least, a comparison with a Carrier Storage Trench-gate Bipolar Transistor and a Trench Field Stop IGBT also including a Si_(1-x)Ge_(x) N⁺ buffer layer is done by the mean of trade off curves.