Title :
Evaluation of the performances of a novel Punch Through Trench IGBT using a Si(1-x)Ge(x) N+ buffer layer by using finite elements simulations
Author :
Azzopardi, S. ; Belmehdi, Y. ; Capy, F. ; Deletage, J.Y. ; Woirgard, E.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
In this paper, a new Punch Through Trench IGBT using a Si(1-x)Gex N+ buffer layer is investigated by using two dimensional finite elements numerical simulations. The performances of this device are mainly obtained from the reduction of the turn-off switching time for a slight elevation of the on-state voltage. A study of the main static characteristics has been performed, particularly the relevance of the trade-off between the turn-off time and the on-state voltage, and its temperature dependency. At least, a comparison with a Carrier Storage Trench-gate Bipolar Transistor and a Trench Field Stop IGBT also including a Si(1-x)Ge(x) N+ buffer layer is done by the mean of trade off curves.
Keywords :
Ge-Si alloys; finite element analysis; insulated gate bipolar transistors; Si(1-x)Ge(x); finite elements simulation; performance evaluation; punch through trench IGBT; Buffer layers; Finite element methods; Germanium; Insulated gate bipolar transistors; Laboratories; Performance evaluation; Power electronics; Silicon; Temperature dependence; Voltage; Power semiconductor; finite element simulations; hetero-junction; punch-through IGBT;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5543844
