Title :
Coulomb Scattering induced mobility degradation in Ultrathin-body SOI MOSFETs with high-k gate stack
Author :
Yang, J.F. ; Xia, Z.L. ; Du, G. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The mobility degradation in ultrathin-body (UTB) SOI MOSFETs with high-k gate stack induced by Coulomb scattering rates is studied. The Coulomb scattering limited electron mobility for different gate dielectric materials and different silicon body thickness are calculated based on Coulomb scattering theories. The results show that increasing the dielectric constant of high-k gate dielectrics and decreasing the Si body thickness of UTB SOI may suppress the mobility degradation caused by Coulomb scattering. Related explanations on the phenomenon are proposed
Keywords :
MOSFET; dielectric materials; electron mobility; silicon-on-insulator; Coulomb scattering; body thickness; electron mobility; gate dielectric materials; high-k gate stack; mobility degradation; ultrathin-body SOI MOSFET; Degradation; Electron mobility; Equations; High K dielectric materials; High-K gate dielectrics; MOSFETs; Microelectronics; Permittivity; Scattering; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306146
