Title :
Influence of Gate-Electrode Fringing Capacitance on Threshold Voltage of Nano-MOSFET
Author :
Ji, Feng ; Xu, Jing-Ping ; Lai, P.T. ; Chun-Xia Li
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
Abstract :
In this paper, the gate-electrode fringing capacitance of nano-MOSFET is derived by conformal mapping transformation. Threshold voltage including the fringing-capacitance effect is calculated and good agreement with experimental data is obtained. Factors impacting the threshold behaviors of nano-MOSFET are discussed in detail
Keywords :
MOSFET; capacitance; conformal mapping; nanoelectronics; semiconductor device models; conformal mapping transformation; gate-electrode fringing capacitance; nanoMOSFET; threshold behavior; threshold voltage; Capacitance; Channel bank filters; Conformal mapping; Dielectric constant; Electrodes; MOSFET circuits; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306147
