Title :
Analytical Model for Surface Electrical Field of Double RESURF LDMOS with Field Plate
Author :
Gao, Shan ; Chen, Junning ; Ke, Daoming ; Liu, Lei
Author_Institution :
Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
An analytical model for surface electrical field distribution along the drift region of double RESURF LDMOS with the gate and the drain field plates is presented, which takes the influence of non-uniformly doping concentration into account. Based on the 2D Poisson equation, the model provides an closed solution of electrical field distribution including the off-state and the on-state under different bias. The analytical results are verified by the semiconductor device simulator MEDICI and are analyzed based on optimization devices
Keywords :
Poisson equation; electric fields; power MOSFET; semiconductor device models; 2D Poisson equation; MEDICI; analytical model; double RESURF LDMOS; electrical field distribution; field plate; nonuniformly doping concentration; optimization device; surface electrical field; Analytical models; Electric breakdown; MOSFETs; Medical simulation; Poisson equations; Power integrated circuits; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306149
