Analytical Model for Surface Electrical Field of Double RESURF LDMOS with Field Plate

Author

Gao, Shan ; Chen, Junning ; Ke, Daoming ; Liu, Lei

Author_Institution

Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1324

Lastpage

1326

Abstract

An analytical model for surface electrical field distribution along the drift region of double RESURF LDMOS with the gate and the drain field plates is presented, which takes the influence of non-uniformly doping concentration into account. Based on the 2D Poisson equation, the model provides an closed solution of electrical field distribution including the off-state and the on-state under different bias. The analytical results are verified by the semiconductor device simulator MEDICI and are analyzed based on optimization devices

Keywords

Poisson equation; electric fields; power MOSFET; semiconductor device models; 2D Poisson equation; MEDICI; analytical model; double RESURF LDMOS; electrical field distribution; field plate; nonuniformly doping concentration; optimization device; surface electrical field; Analytical models; Electric breakdown; MOSFETs; Medical simulation; Poisson equations; Power integrated circuits; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306149

Filename

4098397