Title :
The analysis and modeling of on-resistance in high-voltage LDMOS
Author :
Jian-Meng ; Shan-Gao ; Jun-Ning Chen ; Dao-Ming Ke
Author_Institution :
Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
An analytical method is proposed in order to compute the on-resistance in high-voltage power device LDMOS with structure of deep n-well and fried plate. With the equivalent series circuit of LDMOS resistance presented, by considering the exponential doping distribution in channel, the channel current equation is modified in this paper. In drift region, the resistance is divided into four components due to doping profiles, current performance and device geometries. Finally, the paper deduced analytic on-resistance expression of LDMOS which agrees with the result obtained from two-dimensional simulation
Keywords :
electric resistance; equivalent circuits; power MOSFET; power semiconductor devices; semiconductor device models; semiconductor doping; 2D simulation; LDMOS resistance; deep n-well structure; equivalent series circuit; exponential doping distribution; fried plate; high-voltage LDMOS; on resistance; two-dimensional simulation; Analytical models; Differential equations; Doping profiles; Equivalent circuits; Geometry; Integrated circuit modeling; Numerical models; Region 3; Scattering; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306150
