Title :
Correction in Threshold Voltage Model Accounting for Quantum Effects in Strong Inversion Channel
Author :
Yuan-Hu ; Dai, Yue-Hua ; Sun, Jia-E ; Ke, Dao-ming ; Chen, Jun-Ning
Author_Institution :
Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
Based on the improved approximation of modified triangular potential well, a physical-based model of MOSFETs threshold voltage as well as its analytical formulation, considering quantum effects in strong inversion layer, is presented. The new model accounts for quantum effects for future generation MOS devices and integration circuits. The calculated results of the improved model obtained from this work were found to be in good agreement with 1D threshold voltage in sub-50nm device, comparing with classical results
Keywords :
MIS devices; MOSFET; semiconductor device models; 1D threshold voltage; MOS devices; MOSFET; integration circuits; inversion channel; quantum effects; sub-50nm device; threshold voltage model correction; triangular potential well; Analytical models; Electrons; MOSFETs; Poisson equations; Potential well; Quantization; Schrodinger equation; Silicon; Sun; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306151
