DocumentCode
3469510
Title
Correction in Threshold Voltage Model Accounting for Quantum Effects in Strong Inversion Channel
Author
Yuan-Hu ; Dai, Yue-Hua ; Sun, Jia-E ; Ke, Dao-ming ; Chen, Jun-Ning
Author_Institution
Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1330
Lastpage
1332
Abstract
Based on the improved approximation of modified triangular potential well, a physical-based model of MOSFETs threshold voltage as well as its analytical formulation, considering quantum effects in strong inversion layer, is presented. The new model accounts for quantum effects for future generation MOS devices and integration circuits. The calculated results of the improved model obtained from this work were found to be in good agreement with 1D threshold voltage in sub-50nm device, comparing with classical results
Keywords
MIS devices; MOSFET; semiconductor device models; 1D threshold voltage; MOS devices; MOSFET; integration circuits; inversion channel; quantum effects; sub-50nm device; threshold voltage model correction; triangular potential well; Analytical models; Electrons; MOSFETs; Poisson equations; Potential well; Quantization; Schrodinger equation; Silicon; Sun; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306151
Filename
4098399
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