Switching characteristic of Si-IEGTs and SiC-PiN diodes pair connected in series

In this paper, in order to realize high voltage static switches of voltage source inverters in high power applications, two series connected 4.5kV rate Si-IEGT with SiC-PiN diode pairs (hybrid combination) are considered with hard switching method. The switching test of power module that is hybrid combination is carried out under 5kV DC bias voltage. The gate driver circuit is designed by high output power capacity for high speed hard switching. Small reverse recovery charge of SiC-PiN diode and the hard switching method are adopted for the purpose of not only high switching frequency but also high power density in the high power converter system. Experimental results show good switching characteristic of voltage balancing with small size capacitor and balance resistors at the switching period.