Accurate Modeling and Extraction Methodology for RF-MOSFET Valid Up to 40GHz

A novel RF-MOSFET model with the intrinsic EKV2.6 model components for CMOS RFIC CAD is presented. A simple and accuracy method is developed to directly extract all the high frequency parasitic effects from measured S-parameters biased at zero and linear region. This model is proposed to overcome the serious problem that based on conventional small-signal MOSFET equivalent circuit structures, none positive gate or gate, source, drain inductances can be derived. The excellent correspondence is achieved between simulated and measured S-parameters from 50MHz to 40GHz. The Verilog-A language is used to describe this model