Title :
Modeling of Scattering at High-k Dielectric/SiO2 Interface of Strained SiGe MOSFETs
Author :
Zhang, Xue-Feng ; Xu, Jing-Ping ; Lai, P.T. ; Zou, Xiao ; Li, Chun-Xia
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
Abstract :
A physical model describing the scattering behavior of holes in the channel of SiGe MOSFET due to interface roughness and remote charged defects of the high-k dielectric/SiO2 interface is proposed. Using the Fang-Howard´s variational wave function, the hole mobility is calculated by considering the above two scattering mechanisms. Simulated results are in good agreement with experimental data
Keywords :
Ge-Si alloys; MOSFET; dielectric materials; hole mobility; scattering; semiconductor device models; silicon compounds; wave functions; Fang-Howard variational wave function; MOSFET; SiGe; SiO2; high-k dielectric interface; hole mobility; hole scattering; interface roughness; remote charged defects; Buffer layers; CMOS technology; Capacitance; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFETs; Scattering; Silicon germanium; Wave functions;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306155
