Optimization of BSIM3 I-V Model for Double Diffused Drain HV MOSFET

This paper presents a technique for modeling double diffused drain high-voltage MOSFET devices (DDD HV MOSFET). I-V measurements have been made by Agilent ICCAP. Based on the difference between DDD HV MOSFET and normal low voltage MOSFET devices (LV MOSFET), the Rd dependency of Vgs is discussed and equations of Rd and delta (the effective V_ds parameter) in the BSIM3v3 model have been optimized. Three parameters are added: Prwg2 which is gate bias quadric coefficient of Rdsw and delta₁, delta₂ which are gate bias coefficients of delta. The optimization has been made on SPICE BSIM3v3 model using SPICE macro model. The contrast between I-V simulated data of optimized HV MOSFET model and the measured data has been made after parameters extraction. They fit very well