Title :
Investigation of Double gate structure for RF application
Author :
Xiao, Han ; Liang, Jiale ; Lei, Ke ; Xiong, Chi ; Huang, Ru
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this paper, the relative RF characteristics of double gate and single gate structures are carefully investigated and compared. Also the impact of structural parameters on RF performance, such as body thickness, gate resistance and spacer lateral length is well studied and optimized to get more specified and practical results
Keywords :
field effect transistors; microwave devices; RF application; body thickness; double gate structure; gate resistance; single gate structures; spacer lateral length; structural parameters impact; Cutoff frequency; Immune system; Intrusion detection; Leakage current; Logic; Microelectronics; Radio frequency; Structural engineering; System-on-a-chip; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306158
