Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

In this work, an analytical model for the integrated inversion charge density in undoped channel for symmetric double-gate (DG-) MOSFETs is developed. Quantum-mechanical effect in the direction normal to the channel is taken into account. Based on the work of Ge (Ge and Fossum, 2002), an expression for the surface potential was established as a function of the integrated inversion charge density Q_i. Then an implicit equation is solved for Q_i.The results from our analytical model are compared with the published data (Baccarani and Reggiani, 1999 and He et al., 2005). The results from 1D numerical solver Schred, which solves the Poisson´s and Schrodinger equations self-consistently, is taken as standard. The results agree neatly with Schred results for a wide range of silicon film thicknesses, exhibiting its superiority over other existing models