Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

Author

Yang, Wenwei ; Yu, Zhiping ; Tian, Lilin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1364

Lastpage

1366

Abstract

In this work, the dominant quantum effects in nano devices are investigated by the full quantum simulation based on the QDAME algorithm, which is suitable to analyze the quantum open system. Compared with the classical drift-diffusion mechanism, the full quantum simulation predicts that due to the carrier tunneling from source to drain in off-state, the control of source/drain (S/D) lateral diffusion becomes more crucial in nano devices to suppress the short-channel-effects (SCEs) and reduce the off-state leakage current. Considering the induced S/D-gate capacitance, a practical method is also proposed to optimize the lateral diffusion length

Keywords

capacitance; field effect transistors; leakage currents; nanoelectronics; semiconductor device models; tunnelling; DG-FET; QDAME algorithm; carrier tunneling; nano devices; off-state leakage current reduction; quantum analysis; quantum effect; quantum open system; short-channel-effect supression; source/drain lateral diffusion; Algorithm design and analysis; Doping; Electric variables; Leakage current; MOSFETs; Optimization methods; Particle scattering; Predictive models; Quantum mechanics; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306184

Filename

4098410