2nd Generation Si and SiC SGTOs for extreme pulse power and sub-microsecond switching

Through a series of ARL Cooperative Agreements, Silicon Power has been able to optimize Silicon and SiC Super GTOs (SGTOs) for extreme pulse power, operating in excess of 10kA/cm², about a 10-fold higher density than the traditional thyristor. Moreover, SGTO active turn-off also provides the opportunity for supporting recovery voltage times (t_q) of 10μs or less at high dV/dt. This paper will detail both Silicon and SiC devices and modules operating at these power densities and some of the modeling that supported 2^nd generation SGTO success.