Design with fluctuations of device characteristics - TCAD can be of any help?

Author

Nishi, Kenji

Author_Institution

Kinki Univ. Tech. Coll., Kumano

Volume

2

fYear

2005

fDate

24-0 Oct. 2005

Firstpage

838

Lastpage

843

Abstract

With the miniaturization of devices, fluctuations of device characteristics have become a major problem for design for manufacturability (DFM). In this paper, origins of device fluctuations are explained in detail. Fluctuations are basically classified in three categories, wafer-to-wafer, across-the-wafer and within-a-chip fluctuations. Some fluctuations are inevitable by nature, and will far apart from the requirement of ITRS semiconductor roadmap. TCAD was effectively used to understand these fluctuations. Two proposals regarding the usage of TCAD are made for LSI designers

Keywords

design for manufacture; integrated circuit design; large scale integration; technology CAD (electronics); ITRS semiconductor roadmap; LSI; TCAD; across-the-wafer fluctuation; design for manufacturability; device fluctuations; wafer-to-wafer fluctuation; within-a-chip fluctuation; Chemical vapor deposition; Design engineering; Design for manufacture; Electric variables; Fabrication; Fluctuations; Furnaces; Large scale integration; Proposals; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2005. ASICON 2005. 6th International Conference On

Conference_Location

Shanghai

Print_ISBN

0-7803-9210-8

Type

conf

DOI

10.1109/ICASIC.2005.1611436

Filename

1611436