DocumentCode :
3469916
Title :
FOUP N2 purge engineering in Fab
Author :
Yiting Kuo ; Tsao, Hen-Wai ; Tuung Luoh ; Ling-Wu Yang ; Tahone Yang ; Kuang-Chao Chen ; Chih-Yuan Lu
Author_Institution :
Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan
fYear :
2013
fDate :
6-6 Sept. 2013
Firstpage :
1
Lastpage :
3
Abstract :
Airborne molecular contamination (AMC) becomes more serious in Fab as the device shrinks and wafer size increases, an economic way for preventing these contaminations is to use N2 purge charging process. The practical FOUP N2 purge engineering is addressed here, which includes the maintenance and management of FOUPs, N2 purge charging flow rate, the design of nozzle, selection of nuzzle material, and tool configuration.
Keywords :
contamination; maintenance engineering; nozzles; semiconductor industry; AMC; FOUP maintenance; FOUP management; FOUP purge engineering; N2; airborne molecular contamination; front opening unified pod; nozzle design; nozzle material; purge charging flow rate; purge charging process; tool configuration; wafer size; Etching; AMC; Condense; FOUP Contamination; Humidity; N2 Purge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
e-Manufacturing & Design Collaboration Symposium (eMDC), 2013
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/eMDC.2013.6756056
Filename :
6756056
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3469916
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