Title :
Local Model Analysis of Gate Insulator Oxides
Author :
Doi, Kentaro ; Mikazuki, Yutaka ; Sugino, Shinya ; Tachibana, Akitomo
Author_Institution :
Dept. of Micro Eng., Kyoto Univ.
Abstract :
The authors have presented local analysis for modeling of gate insulator oxides in nano-CMOS devices based on the rigged QED theory. This analysis is effective to link the correlation between the chemical bonds and dielectric properties. The authors have adopted cluster models of SiO2, ZrO2, HfO2, La2O 3, Ce2O3, and Gd2O3 using ab initio methods for the electronic structure calculations. Careful treatment of valence electrons sheds new light on an important role of the 4f, 5s, 5p, 5d, and 65 orbitals in lanthanoid elements
Keywords :
CMOS integrated circuits; ab initio calculations; bonds (chemical); cerium compounds; gadolinium compounds; hafnium compounds; insulators; lanthanum compounds; nanoelectronics; permittivity; quantum electrodynamics; silicon compounds; zirconium compounds; Ce2O3; Gd2O3; HfO2; La2O3; SiO2; ZrO2; ab initio methods; chemical bonds; cluster models; dielectric properties; gate insulator oxides; nano-CMOS devices; rigged QED theory; valence electrons; Amorphous materials; Chemical analysis; Dielectric substrates; Dielectrics and electrical insulation; Electrons; High-K gate dielectrics; Temperature dependence; Tensile stress; Thermal stability; Wideband;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306199
