Local Model Analysis of Gate Insulator Oxides

Author

Doi, Kentaro ; Mikazuki, Yutaka ; Sugino, Shinya ; Tachibana, Akitomo

Author_Institution

Dept. of Micro Eng., Kyoto Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1411

Lastpage

1414

Abstract

The authors have presented local analysis for modeling of gate insulator oxides in nano-CMOS devices based on the rigged QED theory. This analysis is effective to link the correlation between the chemical bonds and dielectric properties. The authors have adopted cluster models of SiO₂, ZrO₂, HfO₂, La₂O ₃, Ce₂O₃, and Gd₂O₃ using ab initio methods for the electronic structure calculations. Careful treatment of valence electrons sheds new light on an important role of the 4f, 5s, 5p, 5d, and 65 orbitals in lanthanoid elements

Keywords

CMOS integrated circuits; ab initio calculations; bonds (chemical); cerium compounds; gadolinium compounds; hafnium compounds; insulators; lanthanum compounds; nanoelectronics; permittivity; quantum electrodynamics; silicon compounds; zirconium compounds; Ce₂O₃; Gd₂O₃; HfO₂; La₂O₃; SiO₂; ZrO₂; ab initio methods; chemical bonds; cluster models; dielectric properties; gate insulator oxides; nano-CMOS devices; rigged QED theory; valence electrons; Amorphous materials; Chemical analysis; Dielectric substrates; Dielectrics and electrical insulation; Electrons; High-K gate dielectrics; Temperature dependence; Tensile stress; Thermal stability; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306199

Filename

4098425