• DocumentCode
    3470023
  • Title

    Active feedback control of reactive sputtering AlN thin film fro FBAR

  • Author

    Shu-rong, Dong

  • Author_Institution
    Dept. of Inf. Sci. & Electr. Eng., Zhejiang Univ., Hangzhou
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1419
  • Lastpage
    1422
  • Abstract
    AlN thin films with high c-axis orientation are deposited by DC reactive magnetron sputtering and active feedback control system. Based on the analysis of the Berg hysteresis model, the authors analyze the technology parameter influence on the hysteresis effect, including pumping speed, temperature of substrate and target, input power, target to substrate distance and area of target. A new active feedback control method and some improvement to eliminate hysteresis effect are presented to quickly depositing AlN thin film with high c-axis oriented
  • Keywords
    acoustic resonators; aluminium compounds; bulk acoustic wave devices; feedback; hysteresis; sputter deposition; thin films; AlN; Berg hysteresis model; DC reactive magnetron sputtering; FBAR; active feedback control; c-axis orientation; film bulk acoustic wave resonators; hysteresis effect; thin films; Current density; Electron emission; Feedback control; Film bulk acoustic resonators; Hysteresis; Magnetic analysis; Radio frequency; Sputtering; Stability; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306201
  • Filename
    4098427