DocumentCode
3470023
Title
Active feedback control of reactive sputtering AlN thin film fro FBAR
Author
Shu-rong, Dong
Author_Institution
Dept. of Inf. Sci. & Electr. Eng., Zhejiang Univ., Hangzhou
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1419
Lastpage
1422
Abstract
AlN thin films with high c-axis orientation are deposited by DC reactive magnetron sputtering and active feedback control system. Based on the analysis of the Berg hysteresis model, the authors analyze the technology parameter influence on the hysteresis effect, including pumping speed, temperature of substrate and target, input power, target to substrate distance and area of target. A new active feedback control method and some improvement to eliminate hysteresis effect are presented to quickly depositing AlN thin film with high c-axis oriented
Keywords
acoustic resonators; aluminium compounds; bulk acoustic wave devices; feedback; hysteresis; sputter deposition; thin films; AlN; Berg hysteresis model; DC reactive magnetron sputtering; FBAR; active feedback control; c-axis orientation; film bulk acoustic wave resonators; hysteresis effect; thin films; Current density; Electron emission; Feedback control; Film bulk acoustic resonators; Hysteresis; Magnetic analysis; Radio frequency; Sputtering; Stability; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306201
Filename
4098427
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