Simulation on Advanced Shallow Junction Technology with Atomistic Method

Author

Yu, Min ; Yuan, Li ; Sui, Yi ; Zhan, Kai ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Oka, Hideki

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

1423

Lastpage

1425

Abstract

New technologies such as cluster or molecular ion implantation and flash lamp annealing (FLA) seem to be applied as advanced shallow junction technologies. In this paper, the molecular dynamics (MD) model based simulation on B₁₀H₁₄ and B₁₈H₂₂ implantation is performed. The spike annealing of cluster implantation is simulated by atomistic model. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC-1200degC are correctly simulated by atomistic model. The simulation on activation ratio of B in FLA is presented. The discussion on cluster evolution in annealing is performed

Keywords

annealing; boron compounds; integrated circuit manufacture; ion implantation; molecular dynamics method; 0.5 keV; 900 to 1200 C; B₁₀H₁₄; B₁₈H₂₂; atomistic method; flash lamp annealing; molecular dynamics; molecular ion implantation; shallow junction technology; spike annealing; Boron; Circuit simulation; Computational modeling; Integrated circuit technology; Ion implantation; Kinetic energy; Microelectronics; Rapid thermal annealing; Simulated annealing; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306202

Filename

4098428