Title :
A 2 V 100 MHz CMOS vector modulator
Author :
Jieh-Tsorng Wu ; Horng-Der Chang ; Pi-Fen Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
For digital wireless communications, precise phase and amplitude control in carrier modulation is essential to achieve efficient spectrum utilization. In contrast to the conventional I-Q vector modulator, this phase-amplitude vector modulation method can generate a high intermediate-frequency (IF) modulated carrier. A high IF carrier mitigates the design specifications for the radiofrequency (RF) front-end of a heterodyne radio transceiver. This type of modulation is especially suitable for circuit realization of constant-envelope phase modulation schemes that do not require amplitude modulation, such as the Gaussian filtered minimum shift keying (GMSK). The authors present a modulator chip implementing this technique. This chip uses a standard 0.6 /spl mu/m single-poly, double-metal digital CMOS process, and operates with a single 2 V supply.
Keywords :
CMOS digital integrated circuits; digital radio; modulators; 0.6 micron; 100 MHz; 2 V; CMOS vector modulator; GMSK; constant-envelope phase modulation; digital wireless communications; double-metal digital CMOS process; heterodyne radio transceiver; high IF carrier; phase-amplitude vector modulation; single-poly CMOS process; Amplitude modulation; Charge pumps; Circuits; Delay; Frequency conversion; Phase frequency detector; Phase locked loops; Phase modulation; Ring oscillators; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585269