Title :
Reliability evaluation of a flash RAM using step-stress test results
Author :
Sun, Feng-Bin ; Chang, Wayne C.
Author_Institution :
HDDG Reliability Eng., Quantum Corp., Milpitas, CA, USA
Abstract :
This paper presents a reliability evaluation on an ASIC (application specific integrated circuit) flash RAM using an accelerated life test. The accelerated stress applied on the life test is a combination of temperature and humidity using a step-stress profile. Reliability assessment is conducted by using the Peck combination model to quantify the acceleration factors, and convert the operation cycles at various high temperature and humidity conditions to the equivalent cycles at normal operation condition. The Weibull analysis is also conducted based on the cumulative equivalent test time for each PCB. Mean time to failure (MTTF) and the cumulative failure probabilities were calculated for one-year operation, five-year operation, and the 40000 power on- and-off cycles of design specification. The technique of the accelerated life test and reliability assessment presented in this paper can be used in other similar programs and reliability assessment
Keywords :
Weibull distribution; failure analysis; flash memories; humidity; integrated circuit reliability; integrated circuit testing; life testing; random-access storage; ASIC; Peck combination model; Weibull analysis; accelerated life test; acceleration factors; application specific integrated circuit; cumulative equivalent test time; cumulative failure probabilities; flash RAM; high humidity conditions; high temperature conditions; mean time to failure; normal operation condition; operation cycles; power on/off cycles; reliability assessment; reliability evaluation; step-stress testing; Acceleration; Application specific integrated circuits; Circuit testing; Humidity; Integrated circuit reliability; Integrated circuit testing; Life estimation; Life testing; Stress; Temperature;
Conference_Titel :
Reliability and Maintainability Symposium, 2000. Proceedings. Annual
Conference_Location :
Los Angeles, CA
Print_ISBN :
0-7803-5848-1
DOI :
10.1109/RAMS.2000.816317