DocumentCode
3470209
Title
Numerical Analysis of Barrier Layer Effect on Copper Electromigration
Author
Zhu, Lin ; Liu, Hong-xia
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´´an
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1444
Lastpage
1446
Abstract
A modified model for electromigration transport considering the barrier layer effect is developed, based on the one-dimensional continuum model. Electromigration lifetime under the direct current (DC) and pulsed DC stress is analyzed numerically. The simulation results demonstrate that the barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under DC stress is higher than that under the pulsed DC stress
Keywords
boundary-value problems; copper; diffusion barriers; electromigration; integrated circuit interconnections; 1D continuum model; Cu; barrier layer effect; copper diffusion; electromigration lifetime; electromigration transport; modified model; numerical analysis; pulsed DC stress; Continuing education; Copper; Electromigration; Equations; Microelectronics; Numerical analysis; Numerical simulation; Semiconductor materials; Stress; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306231
Filename
4098435
Link To Document