Title :
A 1 Gb/s 8-channel array OEIC with SiGe photodetectors
Author :
Soda, M. ; Morikawa, T. ; Shioiri, S. ; Tezuka, H. ; Sato, F. ; Tatsumi, T. ; Emura, K. ; Tashiro, T.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
A 1 Gb/s 8-channel array opto-electronic integrated circuit (OEIC) fabricated with SiGe photodetectors receives a 0.98 /spl mu/m photo signal. Monolithic integration of SiGe photodetectors and dc coupling between preamplifier and limiter, without an external capacitor, enables fabrication of small and low-cost optical receiver modules. For dc coupling, an offset cancel circuit with a mirror integrator produces a low-pass filter having a large time constant without an external capacitor and compensates the offset voltage. The receiver circuit operates with 3.3 V supply for low power dissipation and is surrounded by a trench for reduced crosstalk. A SiGe photodetector has 20% external quantum efficiency at 0.980 /spl mu/m. The receiver sensitivity is -10.4 dB.
Keywords :
Ge-Si alloys; arrays; integrated optoelectronics; optical receivers; photodetectors; semiconductor materials; 0.98 micron; 1 Gbit/s; 20 percent; 3.3 V; DC coupling; SiGe; SiGe photodetector; crosstalk; external quantum efficiency; limiter; low-pass filter; mirror integrator; monolithic integration; multichannel array OEIC; offset cancel circuit; optical receiver module; optoelectronic integrated circuit; power dissipation; preamplifier; sensitivity; trench; Capacitors; Coupling circuits; Germanium silicon alloys; Monolithic integrated circuits; Optical coupling; Optical receivers; Optoelectronic devices; Photodetectors; Preamplifiers; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585284