Title :
On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect
Author :
Chen, C.n. ; Yarn, K.F. ; Chang, S.h. ; Hung, M.l.
Author_Institution :
Dept. of Electron. Eng., Far-East Coll., Tainan
Abstract :
Optical polarizations of GaN/AlGaN wurtzite quantum wells in various orientations are studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k-p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e. the (10 1macr 0)-oriented layer plane) GaN/Al0.2Ga0.8N quantum well due to the positive crystal-field split energy effect (DeltaCR > 0). Presented theoretical results are consistent with the photoluminescence measurements presented in the literature
Keywords :
aluminium compounds; crystal field interactions; finite difference methods; gallium compounds; light polarisation; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; GaN-AlGaN; Hamiltonian potential matrix; crystal-field effect; k-p finite difference scheme; optical anisotropy; optical polarizations; photoluminescence measurement; wurtzite quantum wells; Aluminum gallium nitride; Anisotropic magnetoresistance; Chromium; Educational institutions; Finite difference methods; Gallium nitride; Geometrical optics; Lattices; Optical polarization; Physics;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306236
