On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect

Author

Chen, C.n. ; Yarn, K.F. ; Chang, S.h. ; Hung, M.l.

Author_Institution

Dept. of Electron. Eng., Far-East Coll., Tainan

fYear

2006

fDate

Oct. 2006

Firstpage

1459

Lastpage

1461

Abstract

Optical polarizations of GaN/AlGaN wurtzite quantum wells in various orientations are studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k-p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e. the (10 1macr 0)-oriented layer plane) GaN/Al_0.2Ga_0.8N quantum well due to the positive crystal-field split energy effect (DeltaCR > 0). Presented theoretical results are consistent with the photoluminescence measurements presented in the literature

Keywords

aluminium compounds; crystal field interactions; finite difference methods; gallium compounds; light polarisation; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; GaN-AlGaN; Hamiltonian potential matrix; crystal-field effect; k-p finite difference scheme; optical anisotropy; optical polarizations; photoluminescence measurement; wurtzite quantum wells; Aluminum gallium nitride; Anisotropic magnetoresistance; Chromium; Educational institutions; Finite difference methods; Gallium nitride; Geometrical optics; Lattices; Optical polarization; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306236

Filename

4098440