Title :
A 4 b 8 GSample/s A/D converter in SiGe bipolar technology
Author :
Xiao, Pengfeng ; Jenkins, K. ; Soyuer, M. ; Ainspan, H. ; Burghartz, J. ; Hyun Shin ; Dolan, M. ; Harame, D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A 4 b flash-type A/D converter (ADC) with pipelined encoder has been implemented in a SiGe bipolar technology for very high-frequency mixed-signal applications. The chip is fully functional at 8 GSample/s. Maximum input bandwidth is 4 GHz based on beat frequency measurements. Both DNL and INL are within 0.25 LSB. The chip includes over 1000 transistors and consumes 500mW at 3.6V.
Keywords :
Ge-Si alloys; analogue-digital conversion; bipolar integrated circuits; mixed analogue-digital integrated circuits; semiconductor materials; 3.6 V; 4 GHz; 4 bit; 500 mW; DNL; INL; SiGe; SiGe bipolar technology; beat frequency; flash-type A/D converter; high-frequency mixed-signal circuit; input bandwidth; pipelined encoder; Bandwidth; Clocks; Coupling circuits; Encoding; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Sampling methods; Silicon germanium; Wiring;
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3721-2
DOI :
10.1109/ISSCC.1997.585294
