Title :
Study of mechanical properties of Cu through-silicon-vias (TSV) specimen using electrodeposition bath
Author :
Huiying Wang ; Ping Cheng ; Su Wang ; Hong Wang ; Yang Yuan ; Ting Gu ; Guifu Ding
Author_Institution :
Sci. & Technol. on Micro/Nano Fabrication Lab., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
The Cu specimens were fabricated by the UV-LIGA process using the electrodeposition bath for through-silicon-via (TSV) filling. Mechanical property of th e Cu specimens was investigated by a uniaxial tensile test. The elastic modulus, yield strength, breaking stre ngth and ultimate strain are 95GPa, 314MPa, 367MPa and 12.4%, respectively. The results indicated that the yield strength and breaking strength of as-deposited Cu specimens were higher than that of the bulk Cu, while the elastic modulus was lower than that of the bulk Cu. The elastic modulus of C u thin film in surface and section are 115.7GPa and 105.4GPa measured by nanoindentation, respectively. This difference is caused by the difference of the grain orientation between the surface and section of Cu thin film.
Keywords :
LIGA; copper; elastic moduli; electrodeposition; integrated circuit testing; nanofabrication; nanoindentation; nanolithography; tensile testing; thin film circuits; three-dimensional integrated circuits; yield strength; Cu; TSV filling; UV-LIGA process; breaking strength; elastic modulus; electrodeposition bath; grain orientation; mechanical property; nanoindentation; pressure 105.4 GPa; pressure 115.7 GPa; pressure 314 MPa; pressure 367 MPa; pressure 95 GPa; thin film; through-silicon-via filling; ultimate strain; uniaxial tensile testing; yield strength; Films; Grain size; Strain; Surface treatment; Through-silicon vias; Cu; Mechanical property; TSV; the grain orientation;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-2718-0
DOI :
10.1109/ICSJ.2013.6756079
