DocumentCode :
3470326
Title :
Ultra-small quantum devices for memory and logic
Author :
Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fYear :
1997
fDate :
8-8 Feb. 1997
Firstpage :
126
Lastpage :
127
Abstract :
A two-dimensional matrix of either a memory or of a logic processor can be fabricated by using a system of two double metal bridge conductors at right angles to each other over a semiconductor structure. The potential wells are the troughs of the conduction bands created by the conduction band offset of heterostructures. Thermionic transfer of the signal charge (around 100 electrons) occurs by 2 transverse pairs of 2 neighboring lines reducing the potential barrier between neighboring wells. The simultaneous signal applied to a pair of y-lines and x-lines defines a single well that can then diagonally transfer its charge to the next well. The matrix of heterostructure potential wells operates like a two-dimensional CCD. There are also signal transfer arrangements with suitable electrode configurations to operate this as a logic network.
Keywords :
charge-coupled devices; logic devices; quantum interference devices; semiconductor storage; CCD; conduction band offset; double metal bridge conductor; logic network; memory; potential well; semiconductor heterostructure; signal charge; thermionic transfer; two-dimensional matrix; ultra-small quantum device; Boolean functions; Electrodes; Electrons; Epitaxial growth; FETs; Fabrication; Logic circuits; Logic devices; Radioactive decay; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-3721-2
Type :
conf
DOI :
10.1109/ISSCC.1997.585295
Filename :
585295
Link To Document :
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