• DocumentCode
    3470326
  • Title

    Ultra-small quantum devices for memory and logic

  • Author

    Hartnagel, H.L.

  • Author_Institution
    Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
  • fYear
    1997
  • fDate
    8-8 Feb. 1997
  • Firstpage
    126
  • Lastpage
    127
  • Abstract
    A two-dimensional matrix of either a memory or of a logic processor can be fabricated by using a system of two double metal bridge conductors at right angles to each other over a semiconductor structure. The potential wells are the troughs of the conduction bands created by the conduction band offset of heterostructures. Thermionic transfer of the signal charge (around 100 electrons) occurs by 2 transverse pairs of 2 neighboring lines reducing the potential barrier between neighboring wells. The simultaneous signal applied to a pair of y-lines and x-lines defines a single well that can then diagonally transfer its charge to the next well. The matrix of heterostructure potential wells operates like a two-dimensional CCD. There are also signal transfer arrangements with suitable electrode configurations to operate this as a logic network.
  • Keywords
    charge-coupled devices; logic devices; quantum interference devices; semiconductor storage; CCD; conduction band offset; double metal bridge conductor; logic network; memory; potential well; semiconductor heterostructure; signal charge; thermionic transfer; two-dimensional matrix; ultra-small quantum device; Boolean functions; Electrodes; Electrons; Epitaxial growth; FETs; Fabrication; Logic circuits; Logic devices; Radioactive decay; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-3721-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.1997.585295
  • Filename
    585295