DocumentCode
3470326
Title
Ultra-small quantum devices for memory and logic
Author
Hartnagel, H.L.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fYear
1997
fDate
8-8 Feb. 1997
Firstpage
126
Lastpage
127
Abstract
A two-dimensional matrix of either a memory or of a logic processor can be fabricated by using a system of two double metal bridge conductors at right angles to each other over a semiconductor structure. The potential wells are the troughs of the conduction bands created by the conduction band offset of heterostructures. Thermionic transfer of the signal charge (around 100 electrons) occurs by 2 transverse pairs of 2 neighboring lines reducing the potential barrier between neighboring wells. The simultaneous signal applied to a pair of y-lines and x-lines defines a single well that can then diagonally transfer its charge to the next well. The matrix of heterostructure potential wells operates like a two-dimensional CCD. There are also signal transfer arrangements with suitable electrode configurations to operate this as a logic network.
Keywords
charge-coupled devices; logic devices; quantum interference devices; semiconductor storage; CCD; conduction band offset; double metal bridge conductor; logic network; memory; potential well; semiconductor heterostructure; signal charge; thermionic transfer; two-dimensional matrix; ultra-small quantum device; Boolean functions; Electrodes; Electrons; Epitaxial growth; FETs; Fabrication; Logic circuits; Logic devices; Radioactive decay; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-3721-2
Type
conf
DOI
10.1109/ISSCC.1997.585295
Filename
585295
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