Title :
Effect of leveler on microstructure and stress of electroplated copper for TSV application
Author :
Xue Feng ; Wei Luo ; Ming Li ; Su Wang
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via copper electroplating solution.
Keywords :
copper; electroplated coatings; internal stresses; three-dimensional integrated circuits; Cu; SEM; TEM; TSV application; copper electroplating; electrochemistry; leveler effect; microstructure; residual stress; through silicon via; Copper; Filling; Films; Grain size; Residual stresses; Through-silicon vias; TSV; electroplating; stress;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-2718-0
DOI :
10.1109/ICSJ.2013.6756081
