DocumentCode
3470391
Title
A numerical model for bottom-up copper electrodeposition of TSV with additives
Author
Wei Luo ; Xue Feng ; Liming Gao ; Ming Li
Author_Institution
Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2013
fDate
11-13 Nov. 2013
Firstpage
1
Lastpage
4
Abstract
The kinetics which explained the copper Superfilling by electrodeposition was investigated since the copper electrodeposition became the standard technique for TSV. In order to interpret the bottom-up Superfilling process conveniently and exactly, a numerical model focused on the mass which can make the copper deposition in the via is built. This model only considered the effect of accelerator and cupric which directly affect the electrodeposition velocity in the via. The effect of two species in the numerical model is represented to two reaction constants kr and kA. Both of two constants are the compound parameters including desorption, adsorption and reaction of deposition mass. Experimental electrodeposition of variable dimension via is used to verify the accuracy of a numerical model. The results show that the model can demonstrate the electrodeposition process of via which is 50μm in diameter.
Keywords
copper; electrodeposition; reaction rate constants; three-dimensional integrated circuits; Cu; TSV; accelerator effect; additives; adsorption; bottom-up Superfilling process; bottom-up copper electrodeposition; copper superfilling; deposition mass reaction; desorption; numerical model; reaction constants; Additives; Adsorption; Copper; Current density; Mathematical model; Numerical models; Through-silicon vias; Numerical model; TSV; accelerator; eletrodeposition;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location
Kyoto
Print_ISBN
978-1-4799-2718-0
Type
conf
DOI
10.1109/ICSJ.2013.6756083
Filename
6756083
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