DocumentCode
3470397
Title
A 170 mW 10 b 50 Msample/s CMOS ADC in 1 mm/sup 2/
Author
Bult, K. ; Buchwald, A. ; Laskowski, J.
fYear
1997
fDate
8-8 Feb. 1997
Firstpage
136
Lastpage
137
Abstract
This 10 b AD-converter at a sample rate of 5O MSample/s, embedded in 50mm/sup 2/ of digital circuitry, shows 8.7 effective bits. A straight flash-architecture would need 1023 accurate fast comparators. With a 2 V input range, a comparator offset voltage of no more than 1 mV can be tolerated. Taking into account that the 1 mV is a 3-6 sigma value, leads to a large chip. If, however, the signals to the comparator are amplified before the critical decision, simple small comparators would suffice. To cope with the dynamic offset caused by the clocking and latch action of the comparator itself, the architecture must tolerate comparator offsets of up to 60-80 mV. Hence, a gain of at least 30 is necessary. A single amplifier however, could not handle this, as the input range of 2 V would be amplified to 60 V. The approach here is to use a distributed amplifier.
Keywords
CMOS integrated circuits; analogue-digital conversion; cascade networks; comparators (circuits)5602188; distributed amplifiers; interpolation; 10 bit; 170 mW; CMOS ADC; chip architecture; clocking; comparator; distributed amplifier; dynamic offset voltage; latching; sample rate; CMOS digital integrated circuits; Clocks; Distributed amplifiers; Impedance; Latches; Resistors; Strips; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-3721-2
Type
conf
DOI
10.1109/ISSCC.1997.585304
Filename
585304
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