• DocumentCode
    3470407
  • Title

    Growth models of copper filling in through silicon via at different current density

  • Author

    Zhaoyu Wang ; Ping Cheng ; Hong Wang ; Honglei Guo ; Guifu Ding ; Xiaolin Zhao ; Jianhua Li

  • Author_Institution
    Sci. & Technol. on Micro/Nano Fabrication Lab., Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2013
  • fDate
    11-13 Nov. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the sub-conformal growth of Cu appeared combined with conformal growth.
  • Keywords
    copper; current density; electroplated coatings; three-dimensional integrated circuits; Cu; aspect ratio; bottom-up growth; copper filling; current density; electroplated copper; filling profile; growth models; through silicon via; Additives; Copper; Current density; Filling; Silicon; Three-dimensional displays; Through-silicon vias; TSV; current density; growth model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-2718-0
  • Type

    conf

  • DOI
    10.1109/ICSJ.2013.6756084
  • Filename
    6756084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3470407