DocumentCode :
3470491
Title :
High-performance 1.06 /spl mu/m vertical-cavity surface-emitting lasers with lnGaAs/GaAsP strain-compensated quantum wells
Author :
Hou, H.Q. ; Choquette, Kent D. ; Hammons, B.E. ; Geib, Kent M.
Author_Institution :
Sandia National Laboratories
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
288
Lastpage :
289
Keywords :
Dielectrics; Gallium arsenide; Indium phosphide; Mirrors; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.603156
Filename :
603156
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3470491
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