DocumentCode :
3470727
Title :
Record low threshold 840 nm laterally oxidized vertical cavity lasers using AHnGaAs/AIGaAs strained active layers
Author :
Ko, Jiweon ; Hegblom, E.R. ; Akulova, Yuliya ; Thibeault, Brian J. ; Coldren, Larry A.
Author_Institution :
ECE Department, University of California
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
289
Lastpage :
290
Keywords :
Apertures; Artificial intelligence; Capacitive sensors; Etching; Gallium arsenide; Indium gallium arsenide; Lifting equipment; Maintenance; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.603157
Filename :
603157
Link To Document :
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