Title :
A damage-free sapphire substrate removal process to realize highly manufacturable wafer-level white LED package
Author :
Shimojuku, Miyuki ; Kojima, Akira ; Shimada, Masanobu ; Tomizawa, Hiroyuki ; Akimoto, Youhei ; Furuyama, H. ; Sugizaki, Yoshiaki ; Shibata, Hajime
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Kawasaki, Japan
Abstract :
We proposed a novel wafer level chip scale package in which Laser Lift Off (LLO) was adopted for substrate removal. We confirmed that the LLO did not cause both mechanical and thermal damages into GaN layer.
Keywords :
III-V semiconductors; chip scale packaging; gallium compounds; light emitting diodes; sapphire; semiconductor epitaxial layers; substrates; wafer level packaging; wide band gap semiconductors; Al2O3; GaN; GaN layer; damage-free sapphire substrate removal process; highly manufacturable wafer-level white LED package; laser lift off; mechanical damages; thermal damages; wafer level chip scale package; Electrodes; Films; Gallium nitride; Lasers; Light emitting diodes; Radiation effects; Substrates; Laser Lift Off(LLO); Wafer-level chip scale package; white LED;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-2718-0
DOI :
10.1109/ICSJ.2013.6756103
