• DocumentCode
    3470753
  • Title

    A damage-free sapphire substrate removal process to realize highly manufacturable wafer-level white LED package

  • Author

    Shimojuku, Miyuki ; Kojima, Akira ; Shimada, Masanobu ; Tomizawa, Hiroyuki ; Akimoto, Youhei ; Furuyama, H. ; Sugizaki, Yoshiaki ; Shibata, Hajime

  • Author_Institution
    Center for Semicond. R&D, Toshiba Corp., Kawasaki, Japan
  • fYear
    2013
  • fDate
    11-13 Nov. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We proposed a novel wafer level chip scale package in which Laser Lift Off (LLO) was adopted for substrate removal. We confirmed that the LLO did not cause both mechanical and thermal damages into GaN layer.
  • Keywords
    III-V semiconductors; chip scale packaging; gallium compounds; light emitting diodes; sapphire; semiconductor epitaxial layers; substrates; wafer level packaging; wide band gap semiconductors; Al2O3; GaN; GaN layer; damage-free sapphire substrate removal process; highly manufacturable wafer-level white LED package; laser lift off; mechanical damages; thermal damages; wafer level chip scale package; Electrodes; Films; Gallium nitride; Lasers; Light emitting diodes; Radiation effects; Substrates; Laser Lift Off(LLO); Wafer-level chip scale package; white LED;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-2718-0
  • Type

    conf

  • DOI
    10.1109/ICSJ.2013.6756103
  • Filename
    6756103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3470753