Design of a 3-5GHz BiFET mixer for ultra wideband application

Author

Feng, Song-Rui ; -Huailin, Liao ; Yan-Tao ; Huang-Ru ; Yuan, Wang-Yang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

2006

Firstpage

1538

Lastpage

1540

Abstract

A 3-5 GHz UWB BiFET mixer is designed using standard Jazz 0.35mum SiGe BiCMOS process. The presented BiFET mixer using BJT as the transconductor stage and MOSFET as the switch stage to achieve better noise and linearity trade off while consume a very low current. The measured results of this direct conversion broadband mixer shows a maximum conversion power gain of 5.1dB at 3GHz, with IF frequency of 10MHz. The mixer core operates from a supply voltage of 3 V and draws a total current of 2.5mA

Keywords

BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; field effect transistors; mixers (circuits); ultra wideband technology; 0.35 micron; 10 MHz; 2.5 mA; 3 GHz; 3 V; 3 to 5 GHz; 5.1 dB; BJT; BiCMOS process; BiFET mixer; MOSFET; SiGe; direct conversion broadband mixer; ultra wideband application; BiCMOS integrated circuits; Germanium silicon alloys; Linearity; MOSFET circuits; Mixers; Power measurement; Silicon germanium; Switches; Transconductors; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306281

Filename

4098464