A 3.3V SiGe HBT Power Amplifier for 5GHz WLAN Application

Author

Peng, Yan-Jun ; Song, Jia-You ; Wang, Zhi-Gong

Author_Institution

Dept. of Radio Eng., Southeast Univ., Nanjing

fYear

2006

fDate

2006

Firstpage

1541

Lastpage

1543

Abstract

A monolithic integrated linear power amplifier (PA) for 5GHz WLAN application has been realized in 0.35mum-SiGe BiCMOS technology. The single-ended 3-stage power amplifier uses on-chip inductors and bond-wire inductance for input and interstage matching. Under a single supply voltage of +3.3V, the SiGe HBT MMIC power amplifier exhibits linear output power of 26.4dBm (P_1dB), small signal gain of 24.7dB and the power added efficiency (PAE) of 29.2% at P_1dB. The die size is only 1.2mmtimes0.8mm

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; microwave bipolar transistors; wireless LAN; 0.35 micron; 0.8 mm; 1.2 mm; 24.7 dB; 3.3 V; 5 GHz; SiGe; SiGe BiCMOS technology; SiGe HBT MMIC power amplifier; SiGe HBT power amplifier; WLAN; bond-wire inductance; linear output power; monolithic integrated linear power amplifier; on-chip inductors; power added efficiency; signal gain; BiCMOS integrated circuits; Bonding; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductance; Inductors; Power amplifiers; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306282

Filename

4098465