A 1/4 inch 330 K square pixel progressive scan CMOS active pixel image sensor

Author

Oba, E. ; Mabuchi, K. ; Lida, Y. ; Nakamura, N. ; Miura, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1997

fDate

8-8 Feb. 1997

Firstpage

180

Lastpage

181

Abstract

CMOS active pixel sensors (APS) have attracted special attention in recent years because of monolithic integration of controlling, driving and signal processing circuitry within a single sensor chip. However, a large pixel area is required for implementing row select, charge reset and amplification elements in a pixel. Further pixel size shrinkage is necessary, especially for applications like consumer-use digital still photography. Reduced cell size is reported for the television, but the device operates only in the interlace scan mode. This consumer-use 1/4 inch 640(H)x480(V) pixel active pixel sensor has a 5.6x5.6/spl mu/m/sup 2/ pixel. The imager operates with a 5.0V single power supply and less than 30mW dissipation. The sensor uses 0.6/spl mu/m, double poly-silicon, triple-metal CMOS process technology.

Keywords

CMOS integrated circuits; consumer electronics; image sensors; photography; 0.25 in; 0.6 micron; 30 mW; 307200 pixel; 480 pixel; 5.0 V; 640 pixel; active pixel image sensor; digital still photography; pixel area; power dissipation; progressive scan devices; triple-metal CMOS process technology; CMOS image sensors; CMOS process; Capacitors; Circuits; Image sensors; Photodiodes; Pixel; Signal processing; Stereolithography; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3721-2

Type

conf

DOI

10.1109/ISSCC.1997.585324

Filename

585324