Applied voltage dependence of hotspot location and temperature in power Si MOSFET

In recent years, thermal problem of electronics has been serious, and accurate thermal design has been required. In conventional thermal design of power Si MOSFET, which is widely used semiconductor device for current control in a lot of area, uniform heat generation has been assumed, and designer has employed average temperature of power Si MOSFET. However, for more accurate thermal design, the non-uniform temperature distribution of power Si MOSFET should be considered. In this study, we performed electro-thermal analysis to investigate non-uniform temperature distribution of power Si MOSFET, and discussed applied voltage dependence of hotspot location and its temperature. The calculation results showed, although applied voltage dependence of hotspot temperature of power Si MOSFET is complex, hot spot appears almost the same location in any applied voltage condition.