Title :
A study on self turn-on phenomenon in fast switching operation of high voltage power MOSFET
Author :
Funaki, Tsuyoshi
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
This paper analytically discusses the self turn-on phenomenon for SiC power MOSFET with deriving circuit formula and device characterization, and the effect of active Miller clamp circuit. The discussion is evaluated with the experiment.
Keywords :
equivalent circuits; power MOSFET; power semiconductor switches; silicon compounds; wide band gap semiconductors; Miller clamp circuit; SiC; SiC power MOSFET; equivalent circuit; fast switching operation; high voltage power MOSFET; self turn-on phenomenon; Clamps; Immune system; Logic gates; MOSFET; Switches; Switching circuits; Voltage fluctuations; gate voltage fluctuation; power MOSFET; self turn-on;
Conference_Titel :
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-2718-0
DOI :
10.1109/ICSJ.2013.6756115
