Influence of diffusion on solid-state bonding for micro-bumps at low temperatures

Author

Ying-Hui Wang ; Suga, Takashi

Author_Institution

Inst. of Innovation in Int. Eng. Educ., Univ. of Tokyo, Tokyo, Japan

fYear

2013

fDate

11-13 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

The influence of diffusion on bonding micro-bumps at low temperatures in solid state was studied. The contamination was detected to act as a barrier layer on diffusion during bonding. The diffusion between Au and Sn occurred even at low temperatures by performing surface activation process before bonding and was effective on improving the bonding quality. The increase of bonding strengths of Au-to-Au micro-bumps were slow followed with bonding time, which appeared a logarithmic rate law. 100% bond yield was achieved and the die shear strength was higher than 10 MPa at low temperatures by performing surface activation process before bonding.

Keywords

bonding processes; contamination; diffusion; gold; microassembling; tin; Au-Au; Au-Sn-Au; barrier layer; bond yield; bonding quality; bonding strengths; bonding time; contamination; die shear strength; diffusion; solid-state microbump bonding; surface activation process; Bonding; Carbon; Gold; Plasma temperature; Surface contamination; Surface treatment; Tin; diffusion; low temperatures; micro-bumps; solid-state bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd

Conference_Location

Kyoto

Print_ISBN

978-1-4799-2718-0

Type

conf

DOI

10.1109/ICSJ.2013.6756117

Filename

6756117