DocumentCode
3471111
Title
I-V characteristic of BJMOSFET based on SOI
Author
Yun, Zeng ; Xiaolei, Li ; Yan, Zhang ; Ling, Zhang
Author_Institution
Inst. of Microelectron., Hunan Univ., Changsha, China
Volume
2
fYear
2005
fDate
24-27 Oct. 2005
Firstpage
1027
Lastpage
1031
Abstract
In this paper, BJMOSFET based on SOI is proposed and the numerical model of the I-V characteristics of SOI BJMOSFET is obtained. Using the circuit simulation software of PSPICE, the I-V characteristics of SOI BJMOSFET are directly simulated and their characteristic graphs are obtained. Through contrasting these simulation results of SOI BJMOSFET with that of bulk silicon BJMOSFET, it is proved that SOI BJMOSFET has much lower threshold voltage and bigger output current and much more output power under the same operating conditions.
Keywords
MOSFET; SPICE; bipolar transistors; circuit simulation; silicon-on-insulator; BJMOSFET; PSPICE; bulk silica; silicon-on-insulator; Analytical models; Charge carrier processes; Circuit simulation; FETs; MOSFET circuits; Microelectronics; SPICE; Silicon; Substrates; Threshold voltage; BJMOSFET; I-V characteristic; PSPICE; SOI; bulk silica;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2005. ASICON 2005. 6th International Conference On
Print_ISBN
0-7803-9210-8
Type
conf
DOI
10.1109/ICASIC.2005.1611499
Filename
1611499
Link To Document