Title :
I-V characteristic of BJMOSFET based on SOI
Author :
Yun, Zeng ; Xiaolei, Li ; Yan, Zhang ; Ling, Zhang
Author_Institution :
Inst. of Microelectron., Hunan Univ., Changsha, China
Abstract :
In this paper, BJMOSFET based on SOI is proposed and the numerical model of the I-V characteristics of SOI BJMOSFET is obtained. Using the circuit simulation software of PSPICE, the I-V characteristics of SOI BJMOSFET are directly simulated and their characteristic graphs are obtained. Through contrasting these simulation results of SOI BJMOSFET with that of bulk silicon BJMOSFET, it is proved that SOI BJMOSFET has much lower threshold voltage and bigger output current and much more output power under the same operating conditions.
Keywords :
MOSFET; SPICE; bipolar transistors; circuit simulation; silicon-on-insulator; BJMOSFET; PSPICE; bulk silica; silicon-on-insulator; Analytical models; Charge carrier processes; Circuit simulation; FETs; MOSFET circuits; Microelectronics; SPICE; Silicon; Substrates; Threshold voltage; BJMOSFET; I-V characteristic; PSPICE; SOI; bulk silica;
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Print_ISBN :
0-7803-9210-8
DOI :
10.1109/ICASIC.2005.1611499
