• DocumentCode
    3471118
  • Title

    Intelligent RAM (IRAM): chips that remember and compute

  • Author

    Patterson, D. ; Anderson, T. ; Cardwell, N. ; Fromm, R. ; Keeton, K. ; Kozyrakis, C. ; Thomas, R. ; Yelick, K.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    1997
  • fDate
    8-8 Feb. 1997
  • Firstpage
    224
  • Lastpage
    225
  • Abstract
    It is time to reconsider unifying logic and memory. Since most of the transistors on this merged chip will be devoted to memory, it is called ´intelligent RAM´. IRAM is attractive because the gigabit DRAM chip has enough transistors for both a powerful processor and a memory big enough to contain whole programs and data sets. It contains 1024 memory blocks each 1kb wide. It needs more metal layers to accelerate the long lines of 600mm/sup 2/ chips. It may require faster transistors for the high-speed interface of synchronous DRAM. Potential advantages of IRAM include lower memory latency, higher memory bandwidth, lower system power, adjustable memory width and size, and less board space. Challenges for IRAM include high chip yield given processors have not been repairable via redundancy, high memory retention rates given processors usually need higher power than DRAMs, and a fast processor given logic is slower in a DRAM process.
  • Keywords
    integrated circuit yield; integrated memory circuits; memory architecture; microprocessor chips; random-access storage; IRAM; adjustable memory width; board space; chip yield; high-speed interface; intelligent RAM; memory bandwidth; memory latency; memory retention rates; merged chip; metal layers; system power; Bandwidth; Computer science; Delay; Electronics industry; Logic; Microprocessors; Random access memory; Read-write memory; Switches; Vector processors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-3721-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.1997.585348
  • Filename
    585348