A 0.18μm CMOS LNA for UHF-RFID Reader Application

Author

Chen, Yuan-ying ; Zhang, Run-xi ; Shi, Chun-qi ; Lai, Zong-sheng

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai

fYear

2006

fDate

2006

Firstpage

1592

Lastpage

1594

Abstract

CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18mum RF-CMOS process. The reverse isolation is about -36.7 dB

Keywords

CMOS integrated circuits; UHF amplifiers; inductors; low noise amplifiers; low-power electronics; radiofrequency identification; 0.18 micron; 1 mA; 1.6 dB; 1.8 V; CMOS LNA; CMOS technologies; LC resonator; TSMC RF-CMOS process; UHF-RFID reader; baseband circuits; high gain LNA; low power consumption; on-chip spiral inductor; stack style single-end structure; Baseband; CMOS technology; Circuits; Energy consumption; Equations; GSM; Personal communication networks; Radio frequency; Radiofrequency identification; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306321

Filename

4098482