GaAs 100 kgate gate array with digital variable delay macro cell using meshed air bridge structure

A delay circuit created by digital circuit technology is required for low-power dissipation and integration with other digital functions. For this purpose, a GaAs 10 kgate gate array with a digital variable delay macro cell (DVDM) is developed. It is difficult to achieve high resolution of delay in the DVDM because of the volume and the deviation in gate propagation delay. More large-scale integration on a gate array is required to meet users´ demands. To address the problem, a novel 100 kgate gate array with the DVDM uses three new circuit technologies (1) a meshed air bridge structure, (2) a rising edge selector, and (3) a delay circuit with a discharge control path.