Title :
Low Power RF Section of a Passive Tag in 0.35/spl mu/m CMOS
Author :
Shen, Hongwei ; Li, Lilan ; Zhou, Yumei
Author_Institution :
Instn. of Microelectron., Chinese Acad. Sci., Beijing
Abstract :
A RF section of a long range passive tag in 0.35 mum CMOS process has been present. It contains a voltage rectifier and a voltage regulator, which convert the RF signal into a regulated DC voltage. A PWM demodulator to decode the data from modulator RF carriers and a FSK backscatter modulator are designed. A local oscillator with the output frequency of 6.6 MHz has been calibrated by the reader´s emitting signals. The whole RF section working voltage is 2V to 3.3V, with current dissipation 13.4 muA at 3.3V. The chip area is 0.96mm2
Keywords :
CMOS integrated circuits; frequency shift keying; low-power electronics; oscillators; pulse width modulation; radiofrequency identification; radiofrequency integrated circuits; rectifying circuits; voltage regulators; 0.35 micron; 13.4 muA; 2 to 3.3 V; 6.6 MHz; CMOS process; FSK backscatter modulator; PWM demodulator; low power RF section; passive tag; radiofrequency section; regulated DC voltage; voltage rectifier; voltage regulator; Backscatter; CMOS process; Decoding; Demodulation; Frequency shift keying; Pulse width modulation; Radio frequency; Rectifiers; Regulators; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306329
