Title :
Yield improvement by reducing charge-up damage of double polysilicon capacitors during via etch
Author :
Beugin, Virginie ; Richard, Max
Author_Institution :
ATMEL, Rousset, France
Abstract :
The charge-up damage on polysilicon capacitors during via etch has been investigated in flash memory devices by varying aspect ratio, power, strip, surface ratio and etch process. A possible explanation of the damage is presented.
Keywords :
capacitors; flash memories; integrated circuit yield; sputter etching; surface charging; C4F8 plasma characteristics; Si; Ti-TiN; Ti/TiN barrier metal deposition; aspect ratio; charge-up damage; double polysilicon capacitors; etch process; flash memory devices; polymer stripper; surface ratio; via etch; yield improvement; Capacitors; Chemistry; Circuits; Etching; Flash memory; Plasma applications; Plasma properties; Polymers; Testing; Tin;
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
DOI :
10.1109/PPID.2003.1200924
