• DocumentCode
    3471460
  • Title

    Ion orbits in electron shading damage

  • Author

    Madziwa-Nussinov, Tsitsi ; Arnush, D. ; Chen, Francis F.

  • Author_Institution
    Electr. Eng. Dept., California Univ., Los Angeles, CA, USA
  • fYear
    2003
  • fDate
    24-25 April 2003
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    In Hashimoto\´s\´ hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a "collector" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.
  • Keywords
    electric fields; iterative methods; photoresists; semiconductor process modelling; sputter etching; surface charging; Poisson equation; accelerated ions; electric field; electron shading damage; etch profile deformations; ion orbits; iterative procedure; negative charge; notching; photoresist; self-consistent computations; sheath electric field; sidewall charging; submicron features; thermal electrons; trenches; vias; Acceleration; Current measurement; Electric variables measurement; Electrons; Etching; Extraterrestrial measurements; Orbits; Resists; Size measurement; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma- and Process-Induced Damage, 2003 8th International Symposium
  • Print_ISBN
    0-7803-7747-8
  • Type

    conf

  • DOI
    10.1109/PPID.2003.1200926
  • Filename
    1200926