DocumentCode
3471460
Title
Ion orbits in electron shading damage
Author
Madziwa-Nussinov, Tsitsi ; Arnush, D. ; Chen, Francis F.
Author_Institution
Electr. Eng. Dept., California Univ., Los Angeles, CA, USA
fYear
2003
fDate
24-25 April 2003
Firstpage
89
Lastpage
92
Abstract
In Hashimoto\´s\´ hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a "collector" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.
Keywords
electric fields; iterative methods; photoresists; semiconductor process modelling; sputter etching; surface charging; Poisson equation; accelerated ions; electric field; electron shading damage; etch profile deformations; ion orbits; iterative procedure; negative charge; notching; photoresist; self-consistent computations; sheath electric field; sidewall charging; submicron features; thermal electrons; trenches; vias; Acceleration; Current measurement; Electric variables measurement; Electrons; Etching; Extraterrestrial measurements; Orbits; Resists; Size measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN
0-7803-7747-8
Type
conf
DOI
10.1109/PPID.2003.1200926
Filename
1200926
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