DocumentCode
3471523
Title
Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication
Author
Giancaterina, Sophie ; Rebrasse, Jean-Paul ; Lecohier, Baudouin ; Keller, Olivia ; Martinetti, Manuela ; Rounds, Stu
Author_Institution
STMicroelectronics, Rousset, France
fYear
2003
fDate
24-25 April 2003
Firstpage
100
Lastpage
103
Abstract
Gate oxide is the most critical oxidation step in the flash memory fabrication sequence. Surfaces free of contaminants are required to grow high quality gate oxides. A correlation between oxide quality and resist removal techniques has been highlighted at the R8 STMicroelectronics production fab, comparing Axcelis FusionGemini ES asher results with those of full wet techniques.
Keywords
flash memories; integrated circuit manufacture; oxidation; photoresists; sputter etching; surface contamination; Axcelis FusionGemini ES asher; R8 STMicroelectronics production fab; downstream plasma exposure; flash memory fabrication; full wet etching; gate oxide quality; oxidation step; resist removal techniques; surface contaminants; Ash; Design for quality; Fabrication; Flash memory; Plasma applications; Plasma chemistry; Plasma sources; Plasma temperature; Resists; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN
0-7803-7747-8
Type
conf
DOI
10.1109/PPID.2003.1200931
Filename
1200931
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