Title :
Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication
Author :
Giancaterina, Sophie ; Rebrasse, Jean-Paul ; Lecohier, Baudouin ; Keller, Olivia ; Martinetti, Manuela ; Rounds, Stu
Author_Institution :
STMicroelectronics, Rousset, France
Abstract :
Gate oxide is the most critical oxidation step in the flash memory fabrication sequence. Surfaces free of contaminants are required to grow high quality gate oxides. A correlation between oxide quality and resist removal techniques has been highlighted at the R8 STMicroelectronics production fab, comparing Axcelis FusionGemini ES asher results with those of full wet techniques.
Keywords :
flash memories; integrated circuit manufacture; oxidation; photoresists; sputter etching; surface contamination; Axcelis FusionGemini ES asher; R8 STMicroelectronics production fab; downstream plasma exposure; flash memory fabrication; full wet etching; gate oxide quality; oxidation step; resist removal techniques; surface contaminants; Ash; Design for quality; Fabrication; Flash memory; Plasma applications; Plasma chemistry; Plasma sources; Plasma temperature; Resists; Testing;
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
DOI :
10.1109/PPID.2003.1200931
