A 0.5 V 200 MHz 1-stage 32 b ALU using a body bias controlled SOI pass-gate logic

Author

Fuse, T. ; Oowaki, Y. ; Yamada, T. ; Kamoshida, M. ; Ohta, A. ; Shino, T. ; Kawanaka, S. ; Terauchi, M. ; Yoshida, T. ; Matsubara, G. ; Yoshioka, S. ; Watanabe, S. ; Yoshimi, M. ; Ohuchi, K. ; Manabe, S.

Author_Institution

ULSI Labs., Toshiba Corp., Kawasaki, Japan

fYear

1997

fDate

8-8 Feb. 1997

Firstpage

286

Lastpage

287

Abstract

SOI CMOS with gate-body connection (DTMOS) and body bias controlled SOI pass-gate logic (BCSOI pass-gate) take advantage of individually isolated SOI device active area and reduce threshold voltage by controlling each device body bias. Hence, they enjoy higher speed than circuits based on fixed low threshold voltage. The direct body bias control used in previous work suffers from leakage current at supply voltage higher than 0.8V due to drain-body junction leakage. A practical circuit technology that offers the highest speed, lowest operation voltage and stable operation under wide supply voltage demonstrates performance with an ALU macro using this technology.

Keywords

CMOS logic circuits; circuit stability; integrated circuit design; leakage currents; silicon-on-insulator; 0.5 V; 200 MHz; 32 bit; ALU; CMOS; SOI pass-gate logic; body bias control; drain-body junction leakage; gate-body connection; leakage current; stable operation; threshold voltage; CMOS logic circuits; Capacitance; Circuit testing; Energy consumption; Leakage current; Logic devices; MOS devices; Threshold voltage; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3721-2

Type

conf

DOI

10.1109/ISSCC.1997.585387

Filename

585387