Title :
A Low-Voltage and Low-Power CMOS LNA Using Forward-Body-Bias NMOS at 5GHz
Author :
Wu, Da-Ke ; Huang, Ru ; Wang, Yang-Yuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
A fully integrated LNA suitable for ultra-low-voltage and ultra-low-power applications is designed in 0.13 mum CMOS technology. A two-stage common-source configuration and forward-body-bias MOSFET are employed to reduce the supply voltage. The proposed LNA exhibits 14.3dB power gain and 2.93dB noise figure at 5GHz while consuming only 0.64mW DC power at the ultra-low supply voltage of 0.4V
Keywords :
CMOS integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; 0.13 micron; 0.4 V; 0.64 mW; 14.3 dB; 2.93 dB; 5 GHz; CMOS technology; forward-body-bias MOSFET; forward-body-bias NMOS; low-power CMOS LNA; microwave amplifiers; noise figure; power gain; two-stage common-source configuration; CMOS technology; Energy consumption; Impedance matching; MOS devices; MOSFETs; Microelectronics; Noise figure; Radiofrequency integrated circuits; Threshold voltage; Topology;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306364
