DocumentCode
3471586
Title
A Low-Voltage and Low-Power CMOS LNA Using Forward-Body-Bias NMOS at 5GHz
Author
Wu, Da-Ke ; Huang, Ru ; Wang, Yang-Yuan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2006
fDate
2006
Firstpage
1658
Lastpage
1660
Abstract
A fully integrated LNA suitable for ultra-low-voltage and ultra-low-power applications is designed in 0.13 mum CMOS technology. A two-stage common-source configuration and forward-body-bias MOSFET are employed to reduce the supply voltage. The proposed LNA exhibits 14.3dB power gain and 2.93dB noise figure at 5GHz while consuming only 0.64mW DC power at the ultra-low supply voltage of 0.4V
Keywords
CMOS integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; 0.13 micron; 0.4 V; 0.64 mW; 14.3 dB; 2.93 dB; 5 GHz; CMOS technology; forward-body-bias MOSFET; forward-body-bias NMOS; low-power CMOS LNA; microwave amplifiers; noise figure; power gain; two-stage common-source configuration; CMOS technology; Energy consumption; Impedance matching; MOS devices; MOSFETs; Microelectronics; Noise figure; Radiofrequency integrated circuits; Threshold voltage; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306364
Filename
4098503
Link To Document